? semiconductor components industries, llc, 2013 september, 2013 ? rev. 1 1 publication order number: ntk3139p/d ntk3139p power mosfet ? 20 v, ? 780 ma, single p ? channel with esd protection, sot ? 723 features ? p ? channel switch with low r ds(on) ? 44% smaller footprint and 38% thinner than sc ? 89 ? low threshold levels allowing 1.5 v r ds(on) rating ? operated at low logic level gate drive ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? load/power switching ? interfacing, logic switching ? battery management for ultra small portable electronics maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 6 v continuous drain current (note 1) steady state t a = 25 c i d ? 780 ma t a = 85 c ? 570 t 5 s t a = 25 c ? 870 power dissipation (note 1) steady state t a = 25 c p d 450 mw t 5 s 550 continuous drain current (note 2) steady state t a = 25 c i d ? 660 ma t a = 85 c ? 480 power dissipation (note 2) t a = 25 c p d 310 mw pulsed drain cur- rent t p = 10 s i dm ? 1.2 a operating junction and storage tempera- ture t j , t stg ? 55 to 150 c lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 2. surface mounted on fr4 board using the minimum recommended pad size http://onsemi.com marking diagram top view sot ? 723 (3 ? lead) 3 12 kd m 1 kd = specific device code m = date code 1 ? gate 2 ? source 3 ? drain v (br)dss r ds(on) typ i d max ? 20 v 0.38 @ ? 4.5 v 0.52 @ ? 2.5 v ? 780 ma 0.70 @ ? 1.8 v 0.95 @ ? 1.5 v ? 660 ma ? 100 ma ? 100 ma sot ? 723 case 631aa style 5 device package shipping ? ordering information ntk3139pt1g sot ? 723 pb ? free 4000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. ntk3139pt1h NTK3139PT5G ntk3139pt5h 8000 / tape & reel
ntk3139p http://onsemi.com 2 thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 3) r ja 280 c/w junction ? to ? ambient ? t = 5 s (note 3) r ja 228 junction ? to ? ambient ? steady state minimum pad (note 4) r ja 400 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 4. surface mounted on fr4 board using the minimum recommended pad size mosfet electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = ? 250 a, reference to 25 c ? 16.5 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 16v t j = 25 c ? 1.0 a t j = 125 c ? 2.0 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 4.5 v 2.0 a on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.45 ? 1.2 v negative threshold temperature coefficient v gs(th) /t j 2.4 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 780 ma 0.38 0.48 v gs = ? 2.5 v, i d = ? 660 ma 0.52 0.67 v gs = ? 1.8 v, i d = ? 100 ma 0.70 0.95 v gs = ? 1.5 v, i d = ? 100 ma 0.95 2.20 forward transconductance g fs v ds = ? 10 v, i d = ? 540 ma 1.2 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = ? 16 v 113 170 pf output capacitance c oss 15 25 reverse transfer capacitance c rss 9.0 15 switching characteristics, v gs = 4.5 v (note 6) turn on delay time t d(on) v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 200 ma, r g = 10 9.0 ns rise time t r 5.8 turnoff delay time t d(off) 32.7 fall time t f 20.3 drain source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 350 ma t j = 25 c ? 0.8 ? 1.2 v reverse recovery time t rr v gs = 0 v, d isd /d t = 100 a/ s, i s = ? 1.0 a, v dd = ? 20 v 13.2 ns charge time t a 11.8 discharge time t b 1.4 reverse recovery charge q rr 5.0 nc 5. pulse test: pulse width = 300 s, duty cycle = 2% 6. switching characteristics are independent of operating junction temperatures
ntk3139p http://onsemi.com 3 typical characteristics ? 2.2 v figure 1. on ? region characteristics figure 2. transfer characteristics ? v ds , drain ? to ? source voltage (v) ? v gs , gate ? to ? source voltage (v) 6 5.5 2.5 2 1.5 1 0.5 0 0 0.5 1.0 1.5 2.0 2.25 1.75 1.25 0.75 0 0.3 0.9 1.5 1.8 figure 3. on ? resistance vs. gate ? to ? source voltage figure 4. on ? resistance vs. drain current and gate voltage ? v gs , gate voltage (v) ? i d , drain current (a) 6 3 2.5 2 1.5 1 0 0.5 1.0 1.5 2.0 2.5 3.0 1.7 1.4 1.9 1.2 0.9 0.7 0.4 0.2 0.3 0.4 0.5 0.6 0.7 0.8 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) ? v ds , drain ? to ? source voltage (v) 115 90 65 40 15 ? 10 ? 35 ? 60 0.2 0.4 0.6 0.8 1.0 1.2 20 15 10 5.0 10 100 1000 10,000 ? i d , drain current (a) ? i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) ? i dss , leakage (na) 4.5 4 3.5 35 v gs = ? 4.5 v to ? 2.5 v ? 1.4 v ? 1.5 v ? 1.6 v ? 1.8 v ? 2.0 v t j = 25 c t j = 25 c t j = 125 c t j = ? 55 c v ds ? 5 v 5.5 5 4.5 4 3.5 i d = ? 0.78 a t j = 25 c t j = 25 c v gs = ? 2.5 v v gs = ? 4.5 v r ds(on) , drain ? to ? source resistance ( ) 140 v gs = ? 1.5 v, i d = ? 100 ma v gs = ? 1.8 v, i d = ? 100 ma v gs = ? 2.5 v, i d = ? 550 ma v gs = ? 4.5 v, i d = ? 630 ma t j = 125 c v gs = 0 v t j = 150 c 0.6 1.2
ntk3139p http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. resistive switching time variation vs. gate resistance ? drain ? to ? source voltage (v) r g , gate resistance ( ) 20 12 10 8 6 4 2 0 0 30 60 90 120 150 100 10 1 1 10 100 figure 9. diode forward voltage vs. current ? v sd , source ? to ? drain voltage (v) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 0.5 2.0 c, capacitance (pf) t, time (ns) ? i s , source current (a) 18 16 14 c iss c oss c rss v gs = 0 v t j = 25 c t d(off) v dd = ? 10 v i d = ? 200 ma v gs = ? 4.5 v t d(on) t f t r 1.0 1.5 v gs = 0 v 25 c 150 c 125 c t j = ? 55 c 1.1 1.2
ntk3139p http://onsemi.com 5 package dimensions sot ? 723 case 631aa issue d style 5: pin 1. gate 2. source 3. drain dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l e notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ? y ? ? x ? x 0.08 y 2x e 1 2 3 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* l2 0.15 0.20 0.25 0.29 ref 3x l2 3x 1 2x top view bottom view side view recommended dimensions: millimeters 0.40 1.50 2x package outline 0.27 2x 0.52 3x 0.36 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntk3139p/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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